Features

• Low VCE (ON) Trench IGBT Technology

• Low Switching Losses

• Maximum Junction Temperature 175 °C

• 5 μS short circuit SOA

• Square RBSOA

• 100 of The Parts Tested for ILM

• Positive VCE (ON) Temperature Coefficient

• Tight Parameter Distribution

• Lead Free Package

Benefits

• High Efficiency in a Wide Range of Applications

• Suitable for a Wide Range of Switching Frequencies due to

Low VCE (ON) and Low Switching Losses

• Rugged Transient Performance for Increased Reliability

• Excellent Current Sharing in Parallel Operation