Description

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

● Ultra Low On-Resistance

● Dual P-Channel MOSFET

● Very Small SOIC Package

● Low Profile (< 1.2mm)

● Available in Tape & Reel

● Lead-Free