Features

• Latest MOSFET silicon technology

• Key parameters optimized for Class-D audio amplifier

applications

• Low RDS(on) for improved efficiency

• Low Qg for better THD and improved efficiency

• Low Qrr for better THD and lower EMI

• Low package stray inductance for reduced ringing and lower

EMI

• Can deliver up to 200 W per channel into 8Ω load in half-bridge

configuration amplifier

• Dual sided cooling compatible

• Compatible with existing surface mount technologies

• RoHS compliant, halogen-free

• Lead-free (qualified up to 260°C reflow)