Description

The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power switch and it is ideal for half bridge circuit configurations. These types can be operated directly from low power integrated circuits.

Features

• 8A, 500V

• 3.7V VCE(SAT)

• Typical Fall Time - 1800ns

• High Input Impedance

• TJ = +150°C