Description

The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.

Features

• 6A, 400V and 500V

• VCE(ON): 2.5V Max.

• TFALL: 1.0µs

• Low On-State Voltage

• Fast Switching Speeds

• High Input Impedance

Applications

• Power Supplies

• Motor Drives

• Protective Circuits