The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

Features

• 6.2A, 1200V, TC = 25°C

• 1200V Switching SOA Capability

• Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss

• Temperature Compensating SABER™ Model

    Thermal Impedance SPICE Model www.intersil.com/

• Related Literature

    - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”