Description

The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

Features

• 35A, 1200V, TC = 25°C

• 1200V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . 350ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss