Features

• 650 V CoolGaN™ technology with 850 VSS surge immunity

• Superior rugged Gate Injection Transistor (GIT) structure

• Dual‑gate for independent bi‑directional functionality

• Superior performance of RSS(on) over operating frequency

• Reliable Thermal Cycling on‑Board (TCoB) performance

• Optimized for soft switching operation

• 2 kV HBM ESD standard

Benefits

• Effective replacement of back‑to‑back uni‑directional products

• Improves system efficiency and power density

• Enables higher switching frequency

• System cost reduction

• Enables new single stage isolated topologies