Features

• Revolutionary semiconductor material - Silicon Carbide

• Benchmark switching behavior

• No reverse recovery/No forward recovery

• Temperature independent switching behavior

• High surge current capability

• Pb-free lead plating; RoHS compliant

• Junction Temperature range from -40°C to 175°C

• System efficiency improvement over Si diodes

• System cost/size savings due to reduced cooling requirements

• Enabling higher frequency/increased power density solutions

• Higher system reliability due to lower operating temperatures

• Reduced EMI