Features

 Revolutionary semiconductor material - Silicon Carbide

 Benchmark switching behavior

 No reverse recovery/ No forward recovery

 Temperature independent switching behavior

 High surge current capability

 Pb-free lead plating; RoHS compliant

 Junction Temperature range from -40°C to 175°C

 System efficiency improvement over Si diodes

 System cost / size savings due to reduced cooling requirements

 Enabling higher frequency / increased power density solutions

 Higher system reliability due to lower operating temperatures

 Reduced EMI