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IDT71V3557S75BGI中文资料
IDT71V3557S75BGI数据手册规格书PDF详情
Description
The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or Zero Bus Turnaround.
Features
◆ 128K x 36, 256K x 18 memory configurations
◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access)
◆ ZBTTM Feature - No dead cycles between write and read cycles
◆ Internally synchronized output buffer enable eliminates the need to control OE
◆ Single R/W (READ/WRITE) control pin
◆ 4-word burst capability (Interleaved or linear)
◆ Individual byte write (BW1 - BW4) control (May tie active)
◆ Three chip enables for simple depth expansion
◆ 3.3V power supply (±5), 3.3V (±5) I/O Supply (VDDQ)
◆ Optional Boundary Scan JTAG Interface (IEEE 1149.1 complaint)
◆ Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA)
IDT71V3557S75BGI产品属性
- 类型
描述
- 型号
IDT71V3557S75BGI
- 功能描述
IC SRAM 4MBIT 75NS 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
2,000
- 系列
MoBL® 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 异步
- 存储容量
16M(2M x 8,1M x 16)
- 速度
45ns
- 接口
并联
- 电源电压
2.2 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-VFBGA
- 供应商设备封装
48-VFBGA(6x8)
- 包装
带卷(TR)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
119-PBGA(14x22) |
71890 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原厂渠道,现货配单 |
|||
IDT |
NEW |
119BGA |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IDT |
25+ |
BGA-165 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
|||
IDT |
2023+ |
SMD |
14139 |
安罗世纪电子只做原装正品货 |
|||
IDT |
23+ |
BGA |
8659 |
原装公司现货!原装正品价格优势. |
|||
IDT |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IDT |
QFP |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IDT |
22+ |
TQFP-100 |
5000 |
只做原装,假一赔十 |
|||
IDT |
23+ |
QFP |
98900 |
原厂原装正品现货!! |
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