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IDT71V3557S中文资料
IDT71V3557S数据手册规格书PDF详情
Description
The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or Zero Bus Turnaround.
Features
◆ 128K x 36, 256K x 18 memory configurations
◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access)
◆ ZBTTM Feature - No dead cycles between write and read cycles
◆ Internally synchronized output buffer enable eliminates the need to control OE
◆ Single R/W (READ/WRITE) control pin
◆ 4-word burst capability (Interleaved or linear)
◆ Individual byte write (BW1 - BW4) control (May tie active)
◆ Three chip enables for simple depth expansion
◆ 3.3V power supply (±5), 3.3V (±5) I/O Supply (VDDQ)
◆ Optional Boundary Scan JTAG Interface (IEEE 1149.1 complaint)
◆ Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA)
IDT71V3557S产品属性
- 类型
描述
- 型号
IDT71V3557S
- 功能描述
IC SRAM 4MBIT 75NS 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
2,000
- 系列
MoBL® 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 异步
- 存储容量
16M(2M x 8,1M x 16)
- 速度
45ns
- 接口
并联
- 电源电压
2.2 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-VFBGA
- 供应商设备封装
48-VFBGA(6x8)
- 包装
带卷(TR)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IDT |
09+ |
TQFP |
5500 |
原装无铅,优势热卖 |
|||
IDT |
24+/25+ |
69 |
原装正品现货库存价优 |
||||
IDT |
25+ |
QFP |
2569 |
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙ |
|||
IDT |
24+ |
QFP |
61 |
||||
IDT |
05+ |
原厂原装 |
4218 |
只做全新原装真实现货供应 |
|||
IDT |
23+ |
165-CABGA(13x15) |
39257 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
22+ |
BGA |
5000 |
全新原装现货!自家库存! |
|||
IDT |
25+ |
QFP |
2650 |
原装优势!绝对公司现货 |
|||
IDT |
23+ |
BGA |
8659 |
原装公司现货!原装正品价格优势. |
|||
IDT |
25+ |
BGA-165 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
IDT71V3557S 资料下载更多...
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IDT相关芯片制造商
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