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IXFC80N08

HIPERFET-TM MOSFET ISOPLUS220-TM

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

IXYS

艾赛斯

IXFC80N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

IXFC80N08

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface

● Silicon chip on Direct-Copper-Bond substrate\n   - High power dissipation\n   - Isolated mounting surface\n   - 2500V electrical isolation\n● Low drain to tab capacitance(<35pF)\n● Low RDS (on)\n● Rugged polysilicon gate cell structure\n● Unclamped Inductive Switching (UIS) rated\n● Fast intrinsic;

LITTELFUSE

力特

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

LITTELFUSE

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

HIPERFET-TM MOSFET ISOPLUS220-TM

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

IXYS

艾赛斯

HiPerFET MOSFET ISOPLUS220

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

IXYS

艾赛斯

N-CHANNEL 80V (D-S) MOSFET

DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology

UTC

友顺

isc N-Channel MOSFET Transistor

文件:279.26 Kbytes Page:2 Pages

ISC

无锡固电

TO-220IS PACKAGE

文件:29.73 Kbytes Page:1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

TO-220AB PACKAGE

文件:29.89 Kbytes Page:1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

IXFC80N08产品属性

  • 类型

    描述

  • Package Style:

    ISOPLUS220™

更新时间:2026-5-19 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXF1002EC
25+
78
78
INTEL
BGA
109
正品原装--自家现货-实单可谈
LEVELONE
26+
QFP
890000
一级总代理商原厂原装大批量现货 一站式服务
INFINERA
15+
BGA
168
全新 发货1-2天
IXYS
原厂封装
9800
原装进口公司现货假一赔百
INTEL
26+
SMD1808
86720
全新原装正品价格最实惠 假一赔百
INTEL
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
INTEL
24+
BGA
30000
一级代理原装现货假一罚十
IXYS
22+
ISOPLUS220?
9000
原厂渠道,现货配单
INFINERA
2450+
BGA
9485
只做原装正品现货或订货假一赔十!

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