位置：首页 > IC中文资料第1845页 > IXFC80N08
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFC80N08 | HIPERFET-TMMOSFETISOPLUS220-TM Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Corporation |  |   |
IXFC80N08 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=85V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HIPERFET-TMMOSFETISOPLUS220-TM Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Corporation | | | |
HiPerFETMOSFETISOPLUS220 Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Corporation | | | |
N-CHANNEL80V(D-S)MOSFET DESCRIPTION TheUTC80N08isanN-channelMOSFETusingUTCadvancedtechnology.Itcanbeusedinapplications,suchaspowersupply(secondarysynchronousrectification),industrialandprimaryswitchetc. FEATURES *TrenchFETPowerMOSFETSTechnology | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor 文件：279.26 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELMOSFETinaTO-220PlasticPackage 文件：942.08 Kbytes Page：6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
N-ChannelMOSFETusesadvancedSGTtechnology 文件：2.24856 Mbytes Page：4 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | | |
N-CHANNELMOSFETinaTO-220PlasticPackage 文件：930.96 Kbytes Page：6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | | |
IXFC80N08产品属性
- 类型
描述
- 型号
IXFC80N08
- 功能描述
MOSFET 80 Amps 80V 0.009 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
23+ |
TO-220 |
7000 |
||||
IXYS/艾赛斯 |
22+ |
ISOPLUS220 |
25000 |
只做原装进口现货,专注配单 |
|||
IXYS |
23+ |
TO-220 |
8000 |
只做原装现货 |
|||
IXYS |
22+ |
ISOPLUS220? |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
23+ |
TO-220 |
60601 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IXYS/艾赛斯 |
23+ |
ISOPLUSTO-220 |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
IXYS |
24+ |
TO-220 |
5000 |
全现原装公司现货 |
|||
IXYS/艾赛斯 |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
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IXFC80N08规格书下载地址
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DdatasheetPDF页码索引
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