HIPERFET-TM MOSFET ISOPLUS220-TM

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

HIPERFET-TM MOSFET ISOPLUS220-TM

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

HiPerFET MOSFET ISOPLUS220

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

N-CHANNEL 80V (D-S) MOSFET

DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology

isc N-Channel MOSFET Transistor

文件：279.26 Kbytes Page：2 Pages

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：942.08 Kbytes Page：6 Pages

N-Channel MOSFET uses advanced SGT technology

文件：2.24856 Mbytes Page：4 Pages

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：930.96 Kbytes Page：6 Pages