HIPERFET-TM MOSFET ISOPLUS220-TM

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface

● Silicon chip on Direct-Copper-Bond substrate\n   - High power dissipation\n   - Isolated mounting surface\n   - 2500V electrical isolation\n● Low drain to tab capacitance(<35pF)\n● Low RDS (on)\n● Rugged polysilicon gate cell structure\n● Unclamped Inductive Switching (UIS) rated\n● Fast intrinsic;

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

HIPERFET-TM MOSFET ISOPLUS220-TM

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

HiPerFET MOSFET ISOPLUS220

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

N-CHANNEL 80V (D-S) MOSFET

DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology

isc N-Channel MOSFET Transistor

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TO-220IS PACKAGE

文件：29.73 Kbytes Page：1 Pages

TO-220AB PACKAGE

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