2 Ampere Dual Low-Side Ultrafast MOSFET Drivers

General Description The IXDN402/IXDI402/IXDF402 consists of two 2 Amp CMOS high speed MOSFET drivers. Each output can source and sink 2A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is TTL or

2 Ampere Dual Low-Side Ultrafast MOSFET Drivers

General Description The IXDN402/IXDI402/IXDF402 consists of two 2 Amp CMOS high speed MOSFET drivers. Each output can source and sink 2A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is TTL or

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR LOW-SIDE 8SOIC 集成电路（IC） 栅极驱动器

MOSFET/IGBT Gate Drivers

2 Ampere Dual Low-Side Ultrafast MOSFET Drivers

General Description The IXDN402/IXDI402/IXDF402 consists of two 2 Amp CMOS high speed MOSFET drivers. Each output can source and sink 2A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is TTL or

2 Ampere Dual Low-Side Ultrafast MOSFET Drivers

General Description The IXDN402/IXDI402/IXDF402 consists of two 2 Amp CMOS high speed MOSFET drivers. Each output can source and sink 2A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is TTL or

2 Ampere Dual Low-Side Ultrafast MOSFET Drivers

General Description The IXDN402/IXDI402/IXDF402 consists of two 2 Amp CMOS high speed MOSFET drivers. Each output can source and sink 2A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is TTL or

2 Ampere Dual Low-Side Ultrafast MOSFET Drivers

General Description The IXDN402/IXDI402/IXDF402 consists of two 2 Amp CMOS high speed MOSFET drivers. Each output can source and sink 2A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is TTL or

MOSFET/IGBT Gate Drivers

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE DRVR LOW-SIDE 8SOIC 集成电路（IC） 栅极驱动器

MOSFET/IGBT Gate Drivers

Rugged PoE Ethernet Switch with Power Distribution Capabilities

FEATURES DESCRIPTION The MILTECH™ 402 Rugged POE Ethernet Switch with Power Distribution Capabilities provides constant LAN & Power between multiple devices used by infantry Soldiers. This MIL-STD, Rugged POE Ethernet Switch with Power Distribution Capabilities features 5 LAN 10/100 (Fast Eth

402/403 All-Welded Flanged Diaphragm Seal

FEATURES „ All-welded construction ensures a leaktight, tamper-proof seal „ Provided standard with corrosion-resistant 316L Stainless steel top housing

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

文件：597.06 Kbytes Page：3 Pages

Standard, Hard Seat

文件：726.25 Kbytes Page：6 Pages

Standard, Hard Seat

文件：726.25 Kbytes Page：6 Pages