High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor

Features ● Silicon Chip on Direct-Copper Bond (DCB) Substrate ● Isolated Mounting Surface ● 4000V~ Electrical Isolation ● High Blocking Voltage ● High Frequency Operation Advantages ● Low Gate Drive Requirement ● High Power Density Applications ● Switch-Mode and Resonant-Mode Power Suppl

封装/外壳：i4-Pac™-5（3 引线） 包装：管件 描述：IGBT 3600V 45A ISOPLUS I4PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Voltage Packages • High Blocking Voltage • High Peak Current Capability • Low Saturation Voltage Advantages • Low Gate Drive Requirement • High Power Density Applications • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Genera

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Voltage Packages • High Blocking Voltage • High Peak Current Capability • Low Saturation Voltage Advantages • Low Gate Drive Requirement • High Power Density Applications • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Genera