1.5-Ampere Dual Low-Side Ultrafast MOSFET Drivers

文件：245.26 Kbytes Page：13 Pages

1.5-Ampere Dual Low-Side Ultrafast MOSFET Drivers

文件：245.26 Kbytes Page：13 Pages

1.5-Ampere Dual Low-Side Ultrafast MOSFET Drivers

文件：245.26 Kbytes Page：13 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR LOW-SIDE 8SOIC 集成电路（IC） 栅极驱动器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR LOW-SIDE 8SOIC 集成电路（IC） 栅极驱动器

1.5-Ampere Dual Low-Side Ultrafast MOSFET Drivers

文件：245.26 Kbytes Page：13 Pages

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS &

30V P-Channel MOSFET

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Product Summary VDS (V) = -30V I

Gasket design for optimal acoustic performance

文件：1.13772 Mbytes Page：19 Pages

30V P-Channel MOSFET

文件：174.72 Kbytes Page：4 Pages