iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(on)=0.4Ω(typ.) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.32Ω(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobu

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.32Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=8.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(on)=0.4Ω(typ.) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

SwitchingVoltageRegulators

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.4Ω(typ.) (2)Highforwardtransferadmittance:|Yfs|=7.5S(typ.) (3)Lowleakagecurrent:IDSS=10µA(max)(VDS=650V) (4)Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA) Applications •SwitchingVoltageRegulato