HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

[ISOCOM] DESCRIPTION The ISP814, ISP824, ISP844 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES • Options :- 10mm lea

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

DESCRIPTION The ISP814, ISP824, ISP844 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES Options :- 10mm lead spread - add G

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

DESCRIPTION The ISP814, ISP824, ISP844 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES Options :- 10mm lead spread - add G

ISP814 AC Input 4 Pin, Single

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

DESCRIPTION The ISP814, ISP824, ISP844 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES Options :- 10mm lead spread - add G

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

[ISOCOM] DESCRIPTION The ISP814, ISP824, ISP844 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES • Options :- 10mm lea

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

DESCRIPTION The ISP814, ISP824, ISP844 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES Options :- 10mm lead spread - add G

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

DESCRIPTION The ISP814, ISP824, ISP844 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES Options :- 10mm lead spread - add G

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

DESCRIPTION The ISP814, ISP824, ISP844 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES Options :- 10mm lead spread - add G

晶体管光耦

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

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Silicon Epitaxial Planar Dual Capacitance Diode

Features • Silicon Epitaxial Planar Diode • Common cathode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios

Optocoupler with Phototransistor Output

DESCRIPTION The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance b

Dual Channel Detector

Two seperate elements, size 1,5x1,5 Individual spectral window for each element Designed for Gas Analysis applications The LHi 814 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications. It includes two pyroelectric elements, each ha

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)