| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSFET 650V, 4A N-CHANNEL FEATURE • RDS(ON),typ.=2.1 Ω@VGS=10V • High Current Rating • Lower Capacitance • Lower Total Gate Charge Minimize Switching Loss • Fast Recovery Body Diode DESCRIPTION The AM04N65 is available in TO220F Package. APPLICATION • Adaptor • Charger • SMPS Standby Power | AITSEMI 创瑞科技 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 3.2A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.97664 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
CET/華瑞 |
23+ |
TO-263 |
122999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
23+ |
TO-263 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
CET/华瑞 |
23+24 |
SOT263 |
16790 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
CET |
25+ |
TO-263 |
40000 |
原装正品,假一罚十! |
|||
CHIPSBANK |
24+ |
SOP28 |
17860 |
公司现货库存,支持实单 |
|||
CET/华瑞 |
25+ |
SOT263 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
CET/華瑞 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
CET/華瑞 |
24+ |
NA/ |
40000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
ISP04N65A规格书下载地址
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DdatasheetPDF页码索引
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