Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

丝印代码：DBBM；Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

Dual LDO with Low Noise, Low IQ, and High PSRR

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封装/外壳：10-VFDFN 裸露焊盘 包装：剪切带（CT） 描述：IC REG LDO 2.85V/2.5V 0.3A 10DFN 集成电路（IC） 线性 + 开关稳压器

封装/外壳：10-VFDFN 裸露焊盘 包装：剪切带（CT） 描述：IC REG LDO 2.85V/2.5V 0.3A 10DFN 集成电路（IC） 稳压器 - 线性

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications?????????

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015

Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Lower RDS(ON) : 0.362 Ω (Typ.)

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015