ISL8011价格
参考价格：￥5.6356
型号：ISL80111IRAJZ 品牌：Intersil 备注：这里有ISL8011多少钱，2026年最近7天走势，今日出价，今日竞价，ISL8011批发/采购报价，ISL8011行情走势销售排行榜，ISL8011报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ISL8011 | 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator ISL8011 is an integrated FET, 1.2A synchronous buck regulator for general purpose point-of load applications. It is optimized for generating low output voltages down to 0.8V. The supply voltage range is from 2.7V to 5.5V allowing the use from common 3.3V or 5V supply rails and Lithium ion battery | INTERSIL |   | |
ISL8011 | 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator ISL8011 is an integrated FET, 1.2A synchronous buck regulator for general purpose point-of load applications. It is optimized for generating low output voltages down to 0.8V. The supply voltage range is from 2.7V to 5.5V allowing the use from common 3.3V or 5V supply rails and Lithium ion battery | RENESAS 瑞萨 | | |
ISL8011 | 1.2A 集成 FET，高效同步降压稳压器 ISL8011 is an integrated FET, 1.2A synchronous buck regulator for general purpose point-of load applications. It is optimized for generating low output voltages down to 0.8V. The supply voltage range is from 2.7V to 5.5V allowing the use from common 3.3V or 5V supply rails and Lithium ion battery in • High Efficiency Synchronous Buck Regulator with Up to 95% Efficiency \n• 2.7V to 5.5V Supply Voltage \n• 1.2A Output Current \n• 100% Maximum Duty Cycle \n• Peak Current Limiting, Short Circuit Protection \n• 200ms Power-On Reset \n• 3% Output Accuracy Over-Temperature/Load/Line \n• Le; | RENESAS 瑞萨 | | |
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output cu | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output cu | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output cu | INTERSIL | | ||
丝印代码：1ADJ；Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 2A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output current • Ultra low dropout: 75mV at 3A, (typical)\n• Excellent VIN PSRR: 70dB at 1kHz (typical)\n• ±1.6% guaranteed VOUT accuracy for -40ºC < TJ < +125ºC\n• Very fast load transient response\n• Extensive protection and reporting features\n• VIN range: 1V to 3.6V, VOUT range: 0.8V to 3.3V\n• Small 10 Ld; | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output cu | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output cu | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output cu | INTERSIL | | ||
丝印代码：2ADJ；Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
丝印代码：2ADJ；Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
丝印代码：2ADJ；Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output cu | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 3A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output current • Ultra low dropout: 75mV at 3A, (typical)\n• Excellent VIN PSRR: 70dB at 1kHz (typical)\n• ±1.6% guaranteed VOUT accuracy for -40ºC < TJ < +125ºC\n• Very fast load transient response\n• Extensive protection and reporting features\n• VIN range: 1V to 3.6V, VOUT range: 0.8V to 3.3V\n• Small 10 Ld; | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output cu | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output cu | INTERSIL | | ||
丝印代码：3ADJ；Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
丝印代码：3ADJ；Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
丝印代码：3ADJ；Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC | RENESAS 瑞萨 | | ||
1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator ISL8011 is an integrated FET, 1.2A synchronous buck regulator for general purpose point-of load applications. It is optimized for generating low output voltages down to 0.8V. The supply voltage range is from 2.7V to 5.5V allowing the use from common 3.3V or 5V supply rails and Lithium ion battery | INTERSIL | | ||
丝印代码：011Z；1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator ISL8011 is an integrated FET, 1.2A synchronous buck regulator for general purpose point-of load applications. It is optimized for generating low output voltages down to 0.8V. The supply voltage range is from 2.7V to 5.5V allowing the use from common 3.3V or 5V supply rails and Lithium ion battery | RENESAS 瑞萨 | | ||
丝印代码：011Z；1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator ISL8011 is an integrated FET, 1.2A synchronous buck regulator for general purpose point-of load applications. It is optimized for generating low output voltages down to 0.8V. The supply voltage range is from 2.7V to 5.5V allowing the use from common 3.3V or 5V supply rails and Lithium ion battery | RENESAS 瑞萨 | | ||
1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator ISL8011 is an integrated FET, 1.2A synchronous buck regulator for general purpose point-of load applications. It is optimized for generating low output voltages down to 0.8V. The supply voltage range is from 2.7V to 5.5V allowing the use from common 3.3V or 5V supply rails and Lithium ion battery | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：756.34 Kbytes Page：17 Pages | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：972.08 Kbytes Page：16 Pages | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：972.08 Kbytes Page：16 Pages | RENESAS 瑞萨 | | ||
丝印代码：1ADJ；Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：972.08 Kbytes Page：16 Pages | RENESAS 瑞萨 | | ||
封装/外壳：10-VFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR POS ADJ 1A 10DFN 集成电路（IC） 线性 + 开关稳压器 | RENESAS 瑞萨 | | ||
封装/外壳：10-VFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR POS ADJ 1A 10DFN 集成电路（IC） 稳压器 - 线性 | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：972.08 Kbytes Page：16 Pages | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：756.34 Kbytes Page：17 Pages | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：972.08 Kbytes Page：16 Pages | RENESAS 瑞萨 | | ||
丝印代码：2ADJ；Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：972.08 Kbytes Page：16 Pages | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：756.34 Kbytes Page：17 Pages | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：756.34 Kbytes Page：17 Pages | INTERSIL | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：972.08 Kbytes Page：16 Pages | RENESAS 瑞萨 | | ||
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：972.08 Kbytes Page：16 Pages | RENESAS 瑞萨 | | ||
丝印代码：3ADJ；Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs 文件：972.08 Kbytes Page：16 Pages | RENESAS 瑞萨 | | ||
General Purpose Transistors(NPN Silicon) General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V | ONSEMI 安森美半导体 | | ||
General Purpose Transistors(NPN Silicon) General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V | ONSEMI 安森美半导体 | | ||
TRIPOLAR PROTECTION FOR ISDN INTERFACES Description Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple Trisil™ with low capacitance. Features ■ Bidirectional triple crowbar protection ■ Peak pulse current: IPP = 30 A , 10/1000 µs ■ Breakdown voltage: – TPI80N: 80 V – T | STMICROELECTRONICS 意法半导体 | | ||
IF amplifier for satellite TV receivers 文件：80.12 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | ||
IF amplifier for satellite TV receivers 文件：80.12 Kbytes Page：12 Pages | PHILIPS 飞利浦 | |
ISL8011产品属性
- 类型
描述
- 输出数量：
1
- 拓扑 [Rail 1]：
Buck
- 输入电压最小值 (V) [Rail 1]：
2.7
- 输入电压最大值 (V) [Rail 1]：
5.5
- 输出电压最小值 (V) [Rail 1]：
0.8
- 输出电压最大值 (V) [Rail 1]：
5.5
- 输出电流最大值 (A) [Rail 1]：
1.2
- IQ [Rail 1]：
5 mA
- 最大占空比 (%)：
100
- 资质级别：
Standard
- 峰值效率 (%)：
96
- POR：
Yes
- SYNCH功能：
No
- 控制类型：
Current Mode
- 开关频率范围 (MHz)：
1.6
- 采样：
YES
- 温度范围：
-40 to +85
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
9548 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS/瑞萨 |
21+ |
10-WFDF |
20000 |
只做原装,质量保证 |
|||
INTERSIL |
25+ |
2839 |
公司原装现货常备库存! |
||||
RENESAS |
22+ |
N/A |
6000 |
原装正品 香港现货 |
|||
Intersil |
22+ |
10-VFDFN |
2100 |
||||
Intersil |
21+ |
10-DFN |
1780 |
十年信誉,只做原装,有挂就有现货! |
|||
RENESAS/瑞萨 |
25+ |
6500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
RENESAS |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS |
22+ |
N/A |
20000 |
||||
INTERSIL |
26+ |
原厂原封装 |
12000 |
正迈科技☑原装☑进口☑诚信大量原装 |
ISL8011芯片相关品牌
ISL8011规格书下载地址
ISL8011参数引脚图相关
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- ISL8107
- ISL8106
- ISL8105
- ISL8104
- ISL8103
- ISL8102
- ISL8101
- ISL8088
- ISL8036
- ISL8033
- ISL8026
- ISL8025
- ISL8024
- ISL8023
- ISL8022
- ISL8018
- ISL8016
- ISL8014
- ISL8013AIRZ-T7A
- ISL8013AIRZ-T
- ISL8013AIRZ
- ISL80138IVEAJZ-T7A
- ISL80138IVEAJZ
- ISL80136IBEAJZ-T7A
- ISL80136IBEAJZ
- ISL8013
- ISL8012IRZ-T7A
- ISL8012IRZ-T
- ISL8012IRZ
- ISL8012EVAL1Z
- ISL80121IR50Z-T7A
- ISL80121IR50Z
- ISL8012
- ISL8011IRZ
- ISL80113IRAJZ-T7A
- ISL80113IRAJZ
- ISL80112IRAJZ-T7A
- ISL80112IRAJZ
- ISL80111IRAJZ-T7A
- ISL80111IRAJZ
- ISL8010IUZ
- ISL80103IRAJZ-TK
- ISL80103IRAJZ-T7A
- ISL80103IRAJZ
- ISL80103IR18Z
- ISL80102IRAJZ-TK
- ISL80102IRAJZ-T7A
- ISL80102IRAJZ
- ISL80102IR18Z-TK
- ISL80101IRAJZ-TK
- ISL80101IRAJZ-T7A
- ISL80101IRAJZ
- ISL80101IR33Z
- ISL80101IR25Z
- ISL80101IR18Z
- ISL80101EVAL2Z
- ISL80101AIRAJZ
- ISL8010
- ISL8009AIRZ-TK
- ISL8009AIRZ-T7A
- ISL8009AIRZ-T
- ISL8002
- ISL6884
- ISL6845
- ISL6844
- ISL6843
- ISL6842
- ISL6841
- ISL6840
- ISL6801
- ISL6755
- ISL6754
- ISL6753
- ISL6752
- ISL6745
- ISL6744
- ISL6742
- ISL6741
- ISL6740
- ISL6730
ISL8011数据表相关新闻
ISL76671AROZ-T7
进口代理
2023-4-11ISL8026IRTAJZ 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：ISL8026IRTAJZ 类别 集成电路（IC）PMIC - 稳压器 - DC DC 开关稳压器 制造商 Renesas Electronics America Inc 包装：1000
2021-8-30ISL81487EIBZ 现货热卖假一赔十，欢迎来电查询 18916952726
ISL81487EIBZ 现货热卖假一赔十，欢迎来电查询 18916952726
2021-7-7ISL81487EIBZ-T
ISL81487EIBZ-T，全新原装当天发货或门市自取0755-82732291.
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该ISL6118是一款双通道，完全独立的过流保护 （超频）的+2.5 V的故障保护IC至+5.5 V环境。该器件具有内部电流监测，准确电流限制，集成电源开关和电流有限延迟闭锁系统的保护。ISL6118的电流检测和限制电路设置额定电流限制到0.6A，这是很好的适合3.3辅助ACPI的应用。是理想的ISL6118同伴芯片到HIP1011D和HIP1011E双PCI热插拔控制器。连同这些充分的ISL6118四个传统PCI控制电压（± 12V的，电源+3.3 V，+5 V）和3.3V的辅助，分别为两个控制功率的PCI插槽符合PCI总线电源管理接口规格1.1修订
2013-2-14ISL72991RH-抗辐射负低压差可调稳压器
辐射硬化ISL72991RH是一个低压差可调负稳压输出电压范围-2.25V至26V。该器件具有输出电流1A功能，可调节电流限制引脚（ILIM）和关断引脚（SD）开/关控制容易。该设备采用独特的电路，使精确的性能在-55 ° C至+125° C温度范围和后照射。规格包括一个参考电压为-1.25V+40 mV/-50mV（最大），线路调节±25mV的（最大），并装入±15mV的（最大）的监管。与介质隔离Intersil的构造拉德硬硅门（RSG）BiCMOS工艺，这些器件免疫单事件闭锁，并已明确旨在提供高可靠性的恶劣表现辐射环境。 应用 •开关电源
2013-1-25
DdatasheetPDF页码索引
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- P4
- P5
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