| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ISL73024SEH | 200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 |   | |
ISL73024SEH | 200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | |
ISL73024SEH | 200V, 7.5A Enhancement Mode GaN Power Transistors The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation up to 100krad(Si) High Dose Rate (HDR) and 75krad(Si) low Dose Rate (LDR). A •\n• Very low rDS(ON) 45mΩ (typical) \n• Ultra low total gate charge 2.5nC (typical) \n• SEE tolerance (VDS = 160V, VGS = 0V) \n• Characterized at LET 86 MeV•cm2/mg \n• Radiation hardness assurance testing (lot-by-lot) \n• High dose rate (50-300rad(Si)/s): 100krad(Si) \n• Low dose rate (0.01rad(Si)/; | RENESAS 瑞萨 | | |
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
Double Scart Interface IC Overview This LA73024AV is a double scart interface IC. Functions • AV switches, • Changeable Gain AMP • 6dB AMP+driver • FSS output | SANYO 三洋 | | ||
MMCX PLUG STRAIGHT CRIMP, RG178 文件：146.26 Kbytes Page：2 Pages | POMONA Pomona Electronics | | ||
Asynchronous SRAM 文件：613.05 Kbytes Page：12 Pages | GSI | | ||
128K X 24 3MB ASYNCHRONOUS SRAM 文件：218.32 Kbytes Page：11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
ISL73024SEH产品属性
- 类型
描述
- IDS (A)：
7.5
- VGS(TH) (Max) (V)：
2.5
- VGS (Max) (V)：
6
- RDSON (Typ) (mΩ)：
45
- QG (nC) typ (nC)：
14
- Thermal Resistance θJC (°C/W)：
18.7
- Low Dose Rate (LDR) (krad (Si))：
75
- Lead Count (#)：
4
- Pkg. Type：
CLCC
- Temp. Range：
-55 to 125°C
- Qualification Level：
Modified Class V
- Models Available：
SPICE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+ |
25000 |
只做原装正品 |
|||||
INTE |
24+ |
SOP14 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
IPS |
09+ |
TO-220 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ILSIM |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ILSIM |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
INTERSIL |
22+ |
QFN-16P |
8000 |
原装正品支持实单 |
|||
INTERSIL |
25+ |
QFN |
17300 |
一级分销商,原装正品 |
|||
ISL |
26+ |
QFN |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
INTERSIL |
2602+ |
QFN |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
INTERSIL |
00/01+ |
QFN16 |
316 |
全新原装100真实现货供应 |
ISL73024SEH芯片相关品牌
ISL73024SEH规格书下载地址
ISL73024SEH参数引脚图相关
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- ISL73127RHF/PROTO
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- ISL73096RHX/SAMPLE
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- ISL72991RHF/PROTO
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- ISL72991RH
- ISL71823ASRHVF
- ISL71823ASRHVD
- ISL71823ASRHQF
- ISL71823ASRHQD
- ISL71823ASRHF/PROTO
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- ISL71823ASRH
- ISL71590SEHVF
- ISL71590SEHF/PROTO
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- ISL7124SRHQFS2740
- ISL7124SRHQF
- ISL7124SRHF/PROTO
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- ISL6884
- ISL6845
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- ISL6801
- ISL6755
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- ISL6752
- ISL6745
- ISL6744
- ISL6742
- ISL6741
- ISL6740
- ISL6730
- ISL6729
- ISL6726
ISL73024SEH数据表相关新闻
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：ISL8026IRTAJZ 类别 集成电路（IC）PMIC - 稳压器 - DC DC 开关稳压器 制造商 Renesas Electronics America Inc 包装：1000
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2013-1-25
DdatasheetPDF页码索引
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