2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide

Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo

2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM

DESCRIPTION This specification covers a range of 2K bit serial EEPROM products, the ST93C56, 56C specified at 5V ± 10 and the ST93C57C specified at 3V to 5.5V. In the text, products are referred to as ST93C56. The ST93C56 is a 2K bit Electrically Erasable Programmable Memory (EEPROM) fabrica

2K 5.0V Automotive Temperature Microwire Serial EEPROM

Description: The Microchip Technology Inc. 93XX56A/B/C devices are 2Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA56C, 93LC56C or 93C56C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit commu

Electrically Erasable Programmable Memories

文件：290.6 Kbytes Page：8 Pages

3-Wire Serial EEPROMs

文件：154.12 Kbytes Page：15 Pages