128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件：201.17 Kbytes Page：21 Pages

静态随机存取存储器 2Mb 12ns 128Kx16 Async 静态随机存取存储器

封装/外壳：48-TFBGA 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路（IC） 存储器

静态随机存取存储器 2Mb 12ns 128Kx16 Async 静态随机存取存储器

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器

静态随机存取存储器 2M (128Kx16) 12ns Async 静态随机存取存储器

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件：201.17 Kbytes Page：21 Pages

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

128K x 16 HIGH-SPEED CMOS STATIC RAM

文件：120.26 Kbytes Page：5 Pages