1M x 36, 2M x 18 36 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

1M x 36, 2M x 18 36 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

1M x 36, 2M x 18 36 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

1M x 36, 2M x 18 36 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

1M x 36, 2M x 18 36 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

1M x 36, 2M x 18 36 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

封装/外壳：100-LQFP 包装：卷带（TR） 描述：IC SRAM 36MBIT PARALLEL 100LQFP 集成电路（IC） 存储器

静态随机存取存储器 36Mb, 7.5ns, 3.3V 1024K x 36 Sync 静态随机存取存储器

静态随机存取存储器 36Mb, 7.5ns, 3.3V 1024K x 36 Sync 静态随机存取存储器

封装/外壳：100-LQFP 包装：托盘 描述：IC SRAM 36MBIT PARALLEL 100LQFP 集成电路（IC） 存储器