128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS63/64WV1288DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 μW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low

封装/外壳：32-BSOJ（0.300"，7.62mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

封装/外壳：32-BSOJ（0.300"，7.62mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS63/64WV1288DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 μW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS63/64WV1288DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 μW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low