型号 功能描述 生产厂家 企业 LOGO 操作
IS62WV51216EALL-55TLI-TR

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 8MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

更新时间:2025-11-18 18:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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ISSI
5

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