128Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV1288FALL) – 2.2V-3.6V VDD (IS62/65WV1288FBLL) 

封装/外壳：32-TFSOP（0.465"，11.80mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 32STSOP I 集成电路（IC） 存储器

封装/外壳：32-TFSOP（0.465"，11.80mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 32STSOP I 集成电路（IC） 存储器

128Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV1288FALL) – 2.2V-3.6V VDD (IS62/65WV1288FBLL) 

128Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV1288FALL) – 2.2V-3.6V VDD (IS62/65WV1288FBLL) 

128Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV1288FALL) – 2.2V-3.6V VDD (IS62/65WV1288FBLL) 

128Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV1288FALL) – 2.2V-3.6V VDD (IS62/65WV1288FBLL) 