128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

封装/外壳：32-TFSOP（0.465"，11.80mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 32STSOP I 集成电路（IC） 存储器

封装/外壳：32-TFSOP（0.465"，11.80mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC SRAM 1MBIT PARALLEL 32STSOP I 集成电路（IC） 存储器

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po