256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •