型号 功能描述 生产厂家 企业 LOGO 操作
IS62LV2568LL-70H

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

ISSI

矽成半导体

IS62LV2568LL-70H

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ICSI IS62LV2568L and IS62LV2568LL are low power and low VCC, 262,144 bits words by 8 bits, CMOS RAMs. They are fabricated using ICSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and lo

ICSI

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ICSI IS62LV2568L and IS62LV2568LL are low power and low VCC, 262,144 bits words by 8 bits, CMOS RAMs. They are fabricated using ICSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and lo

ICSI

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ICSI IS62LV2568L and IS62LV2568LL are low power and low VCC, 262,144 bits words by 8 bits, CMOS RAMs. They are fabricated using ICSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and lo

ICSI

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ISSI IS62LV2568LL is a low voltage, 262,144 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. FEATURES •

ISSI

矽成半导体

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

DESCRIPTION The ICSI IS62LV2568L and IS62LV2568LL are low power and low VCC, 262,144 bits words by 8 bits, CMOS RAMs. They are fabricated using ICSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and lo

ICSI

IS62LV2568LL-70H产品属性

  • 类型

    描述

  • 型号

    IS62LV2568LL-70H

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

更新时间:2026-2-9 19:10:00
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ISSI
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NA
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ISSI
00+
TSSOP
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ISSI
00+
TSSOP
2550
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ISSI
24+
SMD
15600
静态随机存取存储器256K(32Kx8)20nsAsync静态随机存取
ISSI Integrated Silicon Soluti
22+
28SOJ
9000
原厂渠道,现货配单
ICS
22+
TSSOP
8000
原装正品支持实单
ISSI
25+
BGA
4500
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ISSI
23+
28-SOJ
39257
专业分销产品!原装正品!价格优势!
ICSI
23+
TSOP
5000
原装正品,假一罚十
ISSI
2023+
TSOP
50000
原装现货

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