型号 功能描述 生产厂家 企业 LOGO 操作

64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Au

ISSI

矽成半导体

64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Au

ISSI

矽成半导体

更新时间:2025-12-24 15:27:01
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