型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV6416DBLL-8BLI

64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV6416DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 μW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low

ISSI

矽成半导体

64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV6416DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 μW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low

ISSI

矽成半导体

64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV6416DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 μW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low

ISSI

矽成半导体

更新时间:2025-12-18 13:01:00
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专营ISSI进口原装现货可开17增值税票

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