型号 功能描述 生产厂家 企业 LOGO 操作

64K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 μW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 μW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 μW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

文件:101.46 Kbytes Page:16 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

文件:101.46 Kbytes Page:16 Pages

ISSI

矽成半导体

更新时间:2025-12-18 10:18:01
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