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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61WV2568EDBLL-10TLI | 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • In | ISSI 矽成半导体 |   | |
IS61WV2568EDBLL-10TLI | 封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
IS61WV2568EDBLL-10TLI | 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC 文件：657.66 Kbytes Page：14 Pages | ISSI 矽成半导体 | | |
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • In | ISSI 矽成半导体 | | ||
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • In | ISSI 矽成半导体 | | ||
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC 文件：657.66 Kbytes Page：14 Pages | ISSI 矽成半导体 | | ||
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC 文件：657.66 Kbytes Page：14 Pages | ISSI 矽成半导体 | | ||
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC 文件：657.66 Kbytes Page：14 Pages | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
SMD |
15600 |
静态随机存取存储器2Mb(256Kx8)10nsAsync静态随机存取 |
|||
ISSI |
21+ |
TSOP44 |
1975 |
||||
ISSI |
23+ |
44-TSOP |
65480 |
||||
IS |
20+ |
TSOP |
2960 |
诚信交易大量库存现货 |
|||
ISSI |
25+ |
TSOP44 |
3850 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ISSI |
12+ |
TSOP44 |
104 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
24+ |
NA |
52164 |
||||
ISSI |
23+ |
TSOP44 |
4803 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ISSI |
25+ |
BGA |
4500 |
ISSI存储芯片在售 |
|||
ISSI, Integrated Silicon Solu |
23+ |
44-TSOP2 |
7300 |
专注配单,只做原装进口现货 |
IS61WV2568EDBLL-10TLI芯片相关品牌
IS61WV2568EDBLL-10TLI规格书下载地址
IS61WV2568EDBLL-10TLI参数引脚图相关
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IS61WV2568EDBLL-10TLI数据表相关新闻
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2021-10-11IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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