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2Mx8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV20488FALL) – 2.4V-3.6V VDD (IS61/64WV20488FBLL

ISSI

矽成半导体

2Mx8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV20488FALL) – 2.4V-3.6V VDD (IS61/64WV20488FBLL

ISSI

矽成半导体

2Mx8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV20488FALL) – 2.4V-3.6V VDD (IS61/64WV20488FBLL

ISSI

矽成半导体

更新时间:2026-2-9 19:57:01
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源自原厂成本,高价回收工厂呆滞

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