1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB

封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：卷带（TR） 描述：IC SRAM 16MBIT PARALLEL 48TSOP I 集成电路（IC） 存储器

封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：卷带（TR） 描述：IC SRAM 16MBIT PARALLEL 48TSOP I 集成电路（IC） 存储器

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB