位置：首页 > IC中文资料 > IS61NLP51236B-200B3LI-TR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61NLP51236B-200B3LI-TR | 封装/外壳：165-TBGA 包装：卷带（TR） 描述：IC SRAM 18MBIT PARALLEL 165TFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC |   |
512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin | ISSI 矽成半导体 | | ||
512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin | ISSI 矽成半导体 | | ||
512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin | ISSI 矽成半导体 | | ||
512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ISSI(美国芯成) |
2447 |
TFBGA-165(13x15) |
315000 |
2000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
ISSI |
2 |
||||||
ISSI(美国芯成) |
25+ |
LQFP-100(14x20) |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
ISSI(美国芯成) |
24+ |
TFBGA-165(13x15) |
16508 |
原装正品现货支持实单 |
|||
ISSI |
1523 |
1008 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
ISSI |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
ISSI |
25+ |
QFP |
1 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ISSI, Integrated Silicon Solut |
21+ |
64-LBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ISSI |
23+ |
TQFP100 |
50000 |
全新原装正品现货,支持订货 |
IS61NLP51236B-200B3LI-TR芯片相关品牌
IS61NLP51236B-200B3LI-TR规格书下载地址
IS61NLP51236B-200B3LI-TR参数引脚图相关
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IS61NLP51236B-200B3LI-TR数据表相关新闻
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进口代理
2022-8-10IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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