型号 功能描述 生产厂家 企业 LOGO 操作

256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM

DESCRIPTION The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M wo

ISSI

矽成半导体

256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE NO WAIT STATE BUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usi

ISSI

矽成半导体

256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE NO WAIT STATE BUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usi

ISSI

矽成半导体

256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM

DESCRIPTION The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M wo

ISSI

矽成半导体

256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE NO WAIT STATE BUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usi

ISSI

矽成半导体

更新时间:2026-2-13 16:31:01
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进口原装!长期供应!绝对优势价格(诚信经营

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