型号 功能描述 生产厂家 企业 LOGO 操作
IS61LV6416L

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

ISSI

矽成半导体

IS61LV6416L

Asynchronous SRAM

ISSI

矽成半导体

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

ICSI

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

ISSI

矽成半导体

64K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

ICSI

IS61LV6416L产品属性

  • 类型

    描述

  • 型号

    IS61LV6416L

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

更新时间:2025-12-14 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
25+
11
公司优势库存 热卖中!
ISSI
24+
TSOP
9600
原装现货,优势供应,支持实单!
ISSI
三年内
1983
只做原装正品
ISSI
2447
TSOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ISSI
23+
TSOP44
7000
ISS
23+
65480
ISSI
23+
TSOP
61432
##公司主营品牌长期供应100%原装现货可含税提供技术
ISSI/矽成
21+
SOP
7000
正品渠道现货,终端可提供BOM表配单。
ISSI/矽成
05+
SRAM/64KX16FAST/HIGHSPEE
96
原装香港现货真实库存。低价
ISSI
23+
TSOP
15000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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