型号 功能描述 生产厂家&企业 LOGO 操作
IS61LV5128-12B

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:73.15 Kbytes Page:9 Pages

ISSI

北京矽成

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:73.15 Kbytes Page:9 Pages

ISSI

北京矽成

512K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61LV5128 is a very high-speed, low power, 524,288-word by 8-bit COMS static RAM. The IC61LV5128 is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low powe

ICSI

512K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61LV5128 is a very high-speed, low power, 524,288-word by 8-bit COMS static RAM. The IC61LV5128 is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low powe

ICSI

512K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61LV5128 is a very high-speed, low power, 524,288-word by 8-bit COMS static RAM. The IC61LV5128 is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low powe

ICSI

512K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61LV5128 is a very high-speed, low power, 524,288-word by 8-bit COMS static RAM. The IC61LV5128 is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low powe

ICSI

IS61LV5128-12B产品属性

  • 类型

    描述

  • 型号

    IS61LV5128-12B

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    512K x 8 HIGH-SPEED CMOS STATIC RAM

更新时间:2025-8-18 19:44:00
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