位置：首页 > IC中文资料第5615页 > IS61LV25616-12LQI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61LV25616-12LQI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 文件：94.05 Kbytes Page：11 Pages | ISSI 矽成半导体 |   | |
IS61LV25616-12LQI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 文件：94.44 Kbytes Page：11 Pages | ISSI 矽成半导体 | | |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co | ICSI | | ||
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co | ICSI | | ||
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co | ICSI | | ||
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co | ICSI | | ||
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co | ICSI | |
IS61LV25616-12LQI产品属性
- 类型
描述
- 型号
IS61LV25616-12LQI
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ICSI |
22+ |
TSOP-44 |
8000 |
原装正品支持实单 |
|||
ISSI |
23+ |
TSOP |
5600 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
ISSI |
25+ |
10 |
公司优势库存 热卖中! |
||||
ISSI |
26+ |
标准封装 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
ISSI |
22+ |
TQFP |
5000 |
全新原装现货!自家库存! |
|||
ISSI |
23+ |
SOP14 |
5000 |
原装正品,假一罚十 |
|||
ISSI |
2023+ |
TSOP |
50000 |
原装现货 |
|||
ISSI |
23+ |
TSOP |
8000 |
只做原装现货 |
|||
ISSI |
23+ |
TSOP |
7000 |
IS61LV25616-12LQI芯片相关品牌
IS61LV25616-12LQI规格书下载地址
IS61LV25616-12LQI参数引脚图相关
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- IS61LV25616-10T
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- IS61LV25616-10KI
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- IS61LV25616-10BI
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- IS61LV25616_01
- IS61LV25616
- IS61LV256-15TL-TR
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IS61LV25616-12LQI数据表相关新闻
IS61C1024AL-12KLI
进口代理
2022-9-21IS61C5128AS-25TLI
进口代理
2022-8-10IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1
DdatasheetPDF页码索引
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