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IS61LV256-15N

32K x 8 LOW VOLTAGE CMOS STATIC RAM

文件:100 Kbytes Page:8 Pages

ISSI

北京矽成

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

ICSI

IS61LV256-15N产品属性

  • 类型

    描述

  • 型号

    IS61LV256-15N

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    32K x 8 LOW VOLTAGE CMOS STATIC RAM

更新时间:2025-8-13 16:13:00
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