位置：首页 > IC中文资料第3625页 > IS61LV256-12TLI-TR
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61LV256-12TLI-TR | 封装/外壳：28-TSSOP（0.465"，11.80mm 宽） 包装：卷带（TR） 描述：IC SRAM 256KBIT PAR 28TSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC |   |
32K x 8 Hight Speed SRAM with 3.3V DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is | ICSI | | ||
32K x 8 Hight Speed SRAM with 3.3V DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is | ICSI | | ||
32K x 8 Hight Speed SRAM with 3.3V DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is | ICSI | | ||
32K x 8 Hight Speed SRAM with 3.3V DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is | ICSI | | ||
32K x 8 Hight Speed SRAM with 3.3V DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is | ICSI | |
IS61LV256-12TLI-TR产品属性
- 类型
描述
- 型号
IS61LV256-12TLI-TR
- 功能描述
静态随机存取存储器 256K 32Kx8 12ns 3.3v
- RoHS
否
- 制造商
Cypress Semiconductor
- 存储容量
16 Mbit
- 组织
1 M x 16
- 访问时间
55 ns
- 电源电压-最大
3.6 V
- 电源电压-最小
2.2 V
- 最大工作电流
22 uA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
TSOP-48
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
21+ |
TSOP28 |
10000 |
原装现货假一罚十 |
|||
ISSI |
2016+ |
DIP |
6528 |
只做进口原装现货!或订货,假一赔十! |
|||
ISSI |
25+ |
SOJ |
2500 |
强调现货,随时查询! |
|||
ISSI |
25+ |
TSOP |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
ISSI |
23+ |
TSOP28 |
4800 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ISSI |
23+ |
28-TSOPI |
36430 |
专业分销产品!原装正品!价格优势! |
|||
ISSI |
96+ |
SOJ-28 |
9 |
原装现货海量库存欢迎咨询 |
|||
ISSI |
03+ |
SOJ28 |
1570 |
全新原装进口自己库存优势 |
|||
ISSI |
23+ |
PLCC44 |
9526 |
||||
ISSI |
24+ |
SOJ |
4500 |
原装正品!公司现货!欢迎来电! |
IS61LV256-12TLI-TR芯片相关品牌
IS61LV256-12TLI-TR规格书下载地址
IS61LV256-12TLI-TR参数引脚图相关
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IS61LV256-12TLI-TR数据表相关新闻
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进口代理
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2022-8-10IS61LV25616AL-10T现货热卖！！！！
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4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1
DdatasheetPDF页码索引
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