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IS61LPS12836EC价格

参考价格：￥41.0565

型号：IS61LPS12836EC-200TQLI 品牌：Integrated Silicon Solut 备注：这里有IS61LPS12836EC多少钱，2025年最近7天走势，今日出价，今日竞价，IS61LPS12836EC批发/采购报价，IS61LPS12836EC行情走势销售排行榜，IS61LPS12836EC报价。

型号	功能描述	生产厂家企业	LOGO
IS61LPS12836EC	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B2A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B3A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200TQA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B2A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B3A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250TQA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B2LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B3LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200B3LI-TR	封装/外壳：165-TBGA 包装：托盘描述：IC SRAM 4.5MBIT PAR 165TFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LPS12836EC-200TQ	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200TQLI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-200TQLI	封装/外壳：100-LQFP 包装：卷带（TR）描述：IC SRAM 4.5MBIT PARALLEL 100LQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LPS12836EC-250B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B2LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250B3LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250TQ	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836EC-250TQLI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12836A	128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSIIS61(64)LPS12832A, IS61(64)LPS/VPS12836A and IS61(64)LPS/VPS25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performancememory for communication and networking applications. The IS61(64)LPS12832A is organized as 131,072 words by 32 b	ISSI 矽成半导体	ISSI

IS61LPS12836EC产品属性

类型
描述
型号
IS61LPS12836EC
功能描述
静态随机存取存储器 4Mb, 3.3v, 200Mhz 128K x 36 Sync 静态随机存取存储器
RoHS
否
制造商
Cypress Semiconductor
存储容量
16 Mbit
组织
1 M x 16
访问时间
55 ns
电源电压-最大
3.6 V
电源电压-最小
2.2 V
最大工作电流
22 uA
最大工作温度
+ 85 C
最小工作温度
- 40 C
安装风格
SMD/SMT
封装/箱体
TSOP-48
封装
Tray

IS61LPS12836EC供应商更多...

更新时间：2025-12-11 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IS61LPS12836EC-200TQLI-TR	ISSI(美国芯成)	24+	TQFP100(14x20)	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市河锋鑫科技有限公司	IS61LPS12836EC200TQLI	ISSI Integrated Silicon Soluti	22+	100LQFP (14x20)	9000	原厂渠道,现货配单	询价
贸泽芯城（深圳）电子科技有限公司	IS61LPS12836EC-200TQLI	ISSI	23+	TSOP	4800	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市科恒伟业电子有限公司	IS61LPS12836EC-250TQLI	ISSI/芯成	2450+	QFP100	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市冠亿通科技有限公司	IS61LPS12836EC-200B3LI-TR	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	IS61LPS12836EC-200TQLI	ISSI(美国芯成)	2021+	LQFP-100(14x20)	499		询价
深圳市斌腾达科技有限公司	IS61LPS12836EC-200B3LI	ISSI, Integrated Silicon Solut	21+	165-TBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
艾睿（深圳）半导体有限公司	IS61LPS12836EC-200B3LI-TR	ISSI(美国芯成)	2447	TFBGA-165(13x15)	315000	2000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市安富世纪电子有限公司	IS61LPS12836EC-200TQLI-TR	ISSI, Integrated Silicon Solu	23+	100-LQFP14x20	7300	专注配单,只做原装进口现货	询价
瀚佳科技(深圳)有限公司	IS61LPS12836EC-200TQLI	ISSI, Integrated Silicon Solut	24+	100-LQFP(14x20)	56200	一级代理/放心采购	询价

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IS61LPS12836EC价格

IS61LPS12836EC产品属性

IS61LPS12836EC供应商更多...

IS61LPS12836EC芯片相关品牌

IS61LPS12836EC规格书下载地址

IS61LPS12836EC参数引脚图相关

IS61LPS12836EC数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS46TR16256AL-125KBLA2

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引