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型号	功能描述	生产厂家企业	LOGO
IS61LPS12832EC	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B2A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B3A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200TQA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B2A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B3A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250TQA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B2LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200B3LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200TQ	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-200TQLI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B2	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B2L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B2LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B3L	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250B3LI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250TQ	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250TQL	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832EC-250TQLI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS61LPS12832A	128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSIIS61(64)LPS12832A, IS61(64)LPS/VPS12836A and IS61(64)LPS/VPS25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performancememory for communication and networking applications. The IS61(64)LPS12832A is organized as 131,072 words by 32 b	ISSI 矽成半导体	ISSI

IS61LPS12832EC供应商更多...

更新时间：2025-12-15 17:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	IS61LPS12836A-200B2I	ISSI Integrated Silicon Solut	25+	119-BBGA	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市拓亿芯电子有限公司	IS61LPS12836A-200B2I	ISSI	25+	BGA	30000	原装现货,假一赔十.	询价
深圳市斌腾达科技有限公司	IS61LPS12836A-200B2I	ISSI, Integrated Silicon Solut	21+	54-VFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市毅创腾电子科技有限公司	IS61LPS12836A-200B2I	ISSI	23+	119-BGA(14x22)	71890	专业分销产品!原装正品!价格优势!	询价
深圳市赛美科科技有限公司	IS61LPS12836A-200B2I	ISSI		BGA	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市河锋鑫科技有限公司	IS61LPS12836A200B2I	ISSI Integrated Silicon Soluti	22+	119PBGA (14x22)	9000	原厂渠道,现货配单	询价
深圳市纳艾斯科技有限公司	IS61LPS12836A-200B2I	ISSI	24+	BGA	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
瀚佳科技(深圳)有限公司	IS61LPS12836A-200B2I	ISSI, Integrated Silicon Solut	24+	119-PBGA(14x22)	56200	一级代理/放心采购	询价
艾睿（深圳）半导体有限公司	IS61LPS12836A-200B2I	ISSI	2447	BGA	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市安富世纪电子有限公司	IS61LPS12836A-200B2I	ISSI	23+	BGA	8000	只做原装现货	询价

IS61LPS12832EC芯片相关品牌

IS61LPS12832EC规格书下载地址

IS61LPS12832EC参数引脚图相关

IS61LPS12832EC数据表相关新闻

IS61C1024AL-12KLI
进口代理
2022-9-21
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进口代理
2022-8-10
IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
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原装正品热卖假一赔十
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IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

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IS61LPS12832EC供应商更多...

IS61LPS12832EC芯片相关品牌

IS61LPS12832EC规格书下载地址

IS61LPS12832EC参数引脚图相关

IS61LPS12832EC数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS46TR16256AL-125KBLA2

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引