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型号	功能描述	生产厂家企业	LOGO
IS61LPD51236A	512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable,high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD1	ISSI 矽成半导体	ISSI
IS61LPD51236A-200B3	512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable,high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD1	ISSI 矽成半导体	ISSI
IS61LPD51236A-200B3I	512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable,high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD1	ISSI 矽成半导体	ISSI
IS61LPD51236A-200TQ	512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable,high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD1	ISSI 矽成半导体	ISSI
IS61LPD51236A-200TQI	512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable,high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD1	ISSI 矽成半导体	ISSI
IS61LPD51236A-200TQLI	512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable,high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD1	ISSI 矽成半导体	ISSI
IS61LPD51236A-250B3	512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable,high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD1	ISSI 矽成半导体	ISSI
IS61LPD51236A-250B3I	512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable,high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD1	ISSI 矽成半导体	ISSI
IS61LPD51236A-250TQ	512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable,high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD1	ISSI 矽成半导体	ISSI
IS61LPD51236A-250TQI	512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable,high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD1	ISSI 矽成半导体	ISSI
IS61LPD51236B	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200B2	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200B2I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200B2L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200B2LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200B3	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200B3I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200B3L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200B3LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200TQ	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200TQI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200TQL	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-200TQLI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250B2	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250B2I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250B2L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250B2LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250B3	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250B3I	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250B3L	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250B3LI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250TQ	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250TQI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250TQL	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236B-250TQLI	512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs	ISSI 矽成半导体	ISSI
IS61LPD51236A	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61LPD51236A-200B3I	封装/外壳：165-TBGA 包装：托盘描述：IC SRAM 18MBIT PARALLEL 165PBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LPD51236A-200B3I-TR	封装/外壳：165-TBGA 包装：卷带（TR）描述：IC SRAM 18MBIT PARALLEL 165PBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LPD51236B	Synchronous SRAM	ISSI 矽成半导体	ISSI

IS61LPD51236产品属性

类型
描述
型号
IS61LPD51236
功能描述
静态随机存取存储器 18Mb 512Kx36 200MHz Sync 静态随机存取存储器 3.3v
RoHS
否
制造商
Cypress Semiconductor
存储容量
16 Mbit
组织
1 M x 16
访问时间
55 ns
电源电压-最大
3.6 V
电源电压-最小
2.2 V
最大工作电流
22 uA
最大工作温度
+ 85 C
最小工作温度
- 40 C
安装风格
SMD/SMT
封装/箱体
TSOP-48
封装
Tray

IS61LPD51236供应商更多...

更新时间：2025-12-15 18:29:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	IS61LPS102418A-200TQLI	ISSI	21+	TQFP100	1975		询价
千层芯半导体(深圳)有限公司	IS61LPS102418A-200TQLI	ISSI	24+	SMD	12000	专营ISSI进口原装正品假一赔十可開17增值稅票	询价
深圳市宏捷佳电子科技有限公司	IS61LPS102418A-200B3	ISSI Integrated Silicon Solut	25+	165-TBGA	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市斌腾达科技有限公司	IS61LPS102418A-200B3	ISSI, Integrated Silicon Solut	21+	BGA	1000	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市毅创腾电子科技有限公司	IS61LPS102418A-200TQ	ISSI	23+	100-TQFP(14x20)	9550	专业分销产品!原装正品!价格优势!	询价
深圳市壹芯创科技有限公司	IS61LPS10018T-133B	ISSI	22+	BGA	5000	全新原装现货!自家库存!	询价
深圳市河锋鑫科技有限公司	IS61LPS102418A200TQ	ISSI Integrated Silicon Soluti	22+	100TQFP (14x20)	9000	原厂渠道,现货配单	询价
深圳市海天鸿电子科技有限公司	IS61LPS102418A-200TQLI	ISSI	1701+	?	8450	只做原装进口,假一罚十	询价
瀚佳科技(深圳)有限公司	IS61LPS102418A-200B3	ISSI, Integrated Silicon Solut	24+	165-TFBGA(13x15)	56200	一级代理/放心采购	询价
深圳市安富世纪电子有限公司	IS61LPS102418A-200B3	ISSI, Integrated Silicon Solu	23+	165-TFBGA13x15	7300	专注配单,只做原装进口现货	询价

IS61LPD51236芯片相关品牌

IS61LPD51236规格书下载地址

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IS61LPD51236数据表相关新闻

IS61C1024AL-12KLI
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2022-9-21
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IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

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IS61LPD51236产品属性

IS61LPD51236供应商更多...

IS61LPD51236芯片相关品牌

IS61LPD51236规格书下载地址

IS61LPD51236参数引脚图相关

IS61LPD51236数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS46TR16256AL-125KBLA2

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引