位置：首页 > IC中文资料第9799页 > IS61LF409618B-6.5M3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61LF409618B-6.5M3 | 2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a | ISSI 矽成半导体 |   | |
IS61LF409618B-6.5M3 | 2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 文件：1.68486 Mbytes Page：34 Pages | ISSI 矽成半导体 | | |
2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a | ISSI 矽成半导体 | | ||
2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a | ISSI 矽成半导体 | | ||
2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a | ISSI 矽成半导体 | | ||
2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 文件：1.68486 Mbytes Page：34 Pages | ISSI 矽成半导体 | | ||
2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 文件：1.68486 Mbytes Page：34 Pages | ISSI 矽成半导体 | | ||
2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 文件：1.68486 Mbytes Page：34 Pages | ISSI 矽成半导体 | |
IS61LF409618B-6.5M3产品属性
- 类型
描述
- 型号
IS61LF409618B-6.5M3
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
QFP |
6000 |
只做原装，欢迎询价，量大价优 |
|||
ISSI |
23+ |
PBGA165 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ISSI |
23+ |
TQFP100 |
5000 |
原装正品,假一罚十 |
|||
ISSI |
20+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
|||
ISSI, Integrated Silicon Solu |
23+ |
100-TQFP14x20 |
7300 |
专注配单,只做原装进口现货 |
|||
ISSI |
2447 |
QFP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ISSI |
24+ |
QFP |
36520 |
一级代理/放心采购 |
|||
ISSI Integrated Silicon Solut |
25+ |
100-LQFP |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ISSI |
23+ |
100-TQFP |
65480 |
||||
ISSI |
25+ |
PBGA(119) |
3850 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
IS61LF409618B-6.5M3芯片相关品牌
IS61LF409618B-6.5M3规格书下载地址
IS61LF409618B-6.5M3参数引脚图相关
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IS61LF409618B-6.5M3数据表相关新闻
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4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1
DdatasheetPDF页码索引
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