型号 功能描述 生产厂家 企业 LOGO 操作
IS61LF204836B-7.5TQI

2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

IS61LF204836B-7.5TQI

2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件:1.68486 Mbytes Page:34 Pages

ISSI

矽成半导体

2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件:1.68486 Mbytes Page:34 Pages

ISSI

矽成半导体

2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件:1.68486 Mbytes Page:34 Pages

ISSI

矽成半导体

更新时间:2025-12-11 23:00:00
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