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型号	功能描述	生产厂家企业	LOGO
IS61LF102418B	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5B2	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5B2I	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5B2L	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5B2LI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5B3	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5B3I	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5B3L	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5B3LI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5TQ	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5TQI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5TQL	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5TQLI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5B2	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5B2I	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5B2L	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5B2LI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5B3	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5B3I	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5B3L	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5B3LI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5TQ	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5TQI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5TQL	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-7.5TQLI	512K x36 and 1024K x18 18Mb, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs an	ISSI 矽成半导体	ISSI
IS61LF102418B-6.5TQLI-TR	封装/外壳：100-LQFP 包装：卷带（TR）描述：IC SRAM 18MBIT PARALLEL 100LQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LF102418B-7.5TQ	封装/外壳：100-LQFP 包装：托盘描述：IC SRAM 18MBIT PARALLEL 100LQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LF102418A	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a	ISSI 矽成半导体	ISSI
IS61LF102418A	256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 文件：276.75 Kbytes Page：35 Pages	ISSI 矽成半导体	ISSI

IS61LF102418B供应商更多...

更新时间：2026-3-2 18:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市冠亿通科技有限公司	IS61LF102418B-7.5TQ-TR	ISSI, Integrated Silicon Solut			18500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
深圳市河锋鑫科技有限公司	IS61LF102418B7.5TQTR	ISSI Integrated Silicon Soluti	22+	100LQFP (14x20)	9000	原厂渠道,现货配单	询价
艾睿（深圳）半导体有限公司	IS61LF102418B-6.5TQLI	ISSI(美国芯成)	2447	LQFP-100(14x20)	315000	72个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市安富世纪电子有限公司	IS61LF102418B-7.5TQ-TR	ISSI, Integrated Silicon Solu	23+	100-LQFP14x20	7300	专注配单,只做原装进口现货	询价
瀚佳科技(深圳)有限公司	IS61LF102418B-7.5TQ	ISSI, Integrated Silicon Solut	24+	100-LQFP(14x20)	56200	一级代理/放心采购	询价
深圳市宏捷佳电子科技有限公司	IS61LF102418B-7.5TQ-TR	ISSI Integrated Silicon Solut	25+	100-LQFP	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市宇创芯科技有限公司	IS61LF102418B-7.5TQLI	ISSI(美国芯成)	24+	LQFP-100(14x20)	16508	原装正品现货支持实单	询价
讯运(深圳/上海)电子有限公司	IS61LF102418B-7.5TQLI-TR	ISSI(美国芯成)	2021+	LQFP-100(14x20)	499		询价
贸泽芯城（深圳）电子科技有限公司	IS61LF102418B-7.5TQLI	ISSI	23+	TQFP100	10800	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市芯为科技有限公司	IS61LF102418B-7.5TQ	ISSI	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价

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IS61LF102418B供应商更多...

IS61LF102418B芯片相关品牌

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IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引